- 您現在的位置：買賣IC網 > PDF目錄371126 > MMDF3N03HD (ON SEMICONDUCTOR) Power MOSFET 3 Amps, 30 Volts PDF資料下載
參數資料
| 型號： | MMDF3N03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 功率MOSFET 3安培，30伏特 |
| 文件頁數： | 3/10頁 |
| 文件大小： | 281K |
| 代理商： | MMDF3N03HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I
R
R
0
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1.2
1.6
2
0
1
3
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.4
0.5
0.6
0.05
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
0.3
4
2
0.1
TJ = 25
°
C
2
4
6
5
1
2
2.5
3
3.5
4
0.2
0.08
0
0.5
1
2.5
3
10
0
5
10
15
30
2.7 V
2.5 V
20
25
0
0.06
0.07
3
2
3
4
5
8
6
7
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.5
2
10 V
VGS = 4.5
TJ = 25
°
C
R
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.5 A
125
75
25
–25
VGS = 0 V
TJ = 125
°
C
100
°
C
0.2
0.6
1.8
1.4
1
5
6
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
4.1 V
3.9 V
VGS = 10 V
ID = 1.5 A
TJ = 25
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| MMDF3N03HDR2 | Power MOSFET 3 Amps, 30 Volts |
| MMDF4N01HD | DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS |
| MMDF6N02HD | DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
| MMFR-29C516E-31SB | 16 Bit Flow Through EDAC Error Detection And Correction unit |
| MMKR-29C516E-31SB | 16 Bit Flow Through EDAC Error Detection And Correction unit |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R |
| MMDF3N04HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 40 Volts |
| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
發布緊急采購，3分鐘左右您將得到回復。