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參數資料
| 型號： | MMDF3N03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 功率MOSFET 3安培，30伏特 |
| 文件頁數： | 9/10頁 |
| 文件大小： | 281K |
| 代理商： | MMDF3N03HD |
9
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 751–05
SO–8
ISSUE P
STYLE 11:
PIN 1.
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
2.
3.
4.
5.
6.
7.
8.
SEATING
PLANE
1
4
5
8
C
K
4
A
0.25 (0.010)
M
T B
S
S
0
B
M
8X
D
R
M
J
X
F
–A–
–B–
–T–
DIM
A
B
C
D
F
G
J
K
M
P
R
MIN
4.80
3.80
1.35
0.35
0.40
1.27 BSC
0.18
0.10
0
5.80
0.25
MAX
5.00
4.00
1.75
0.49
1.25
MILLIMETERS
0.25
0.25
7
6.20
0.50
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R |
| MMDF3N04HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 40 Volts |
| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
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