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參數資料
| 型號： | MMDF3N03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 功率MOSFET 3安培，30伏特 |
| 文件頁數： | 6/10頁 |
| 文件大小： | 281K |
| 代理商： | MMDF3N03HD |
6
Motorola TMOS Power MOSFET Transistor Device Data
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
A
0
25
50
75
100
125
150
ID = 9 A
250
150
350
100
50
200
300
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
1 ms
100
μ
s
10
μ
s
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
R
T
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0175
0.0710
0.2706
0.5776
0.7086
107.55 F
1.7891 F
0.3074 F
0.0854 F
0.0154 F
Chip
Ambient
Normalized to
θ
ja at 10s.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R |
| MMDF3N04HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 40 Volts |
| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
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