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參數(shù)資料
| 型號(hào)： | MMDF3N03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 3 Amps, 30 Volts |
| 中文描述： | 4.1 A, 30 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 281K |
| 代理商： | MMDF3N03HDR2 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I
R
R
0
0
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.8
1.2
1.6
2
0
1
3
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.4
0.5
0.6
0.05
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
0.3
4
2
0.1
TJ = 25
°
C
2
4
6
5
1
2
2.5
3
3.5
4
0.2
0.08
0
0.5
1
2.5
3
10
0
5
10
15
30
2.7 V
2.5 V
20
25
0
0.06
0.07
3
2
3
4
5
8
6
7
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.5
2
10 V
VGS = 4.5
TJ = 25
°
C
R
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.5 A
125
75
25
–25
VGS = 0 V
TJ = 125
°
C
100
°
C
0.2
0.6
1.8
1.4
1
5
6
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
4.1 V
3.9 V
VGS = 10 V
ID = 1.5 A
TJ = 25
°
C
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|---|---|
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