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參數資料
| 型號： | MMFT5P03HDT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| 中文描述： | 5.2 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 文件頁數： | 3/12頁 |
| 文件大小： | 198K |
| 代理商： | MMFT5P03HDT3 |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
30
—
—
28
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
25
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(1) (3)
VGS(th)
1.0
—
1.75
3.5
3.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.2 Adc)
(VGS = 4.5 Vdc, ID = 2.6 Adc)
(Cpk
≥
2.0)
(1) (3)
RDS(on)
—
—
79
119
100
150
m
Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc)
(1)
gFS
2.0
4.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
475
950
pF
Output Capacitance
—
220
440
Transfer Capacitance
—
70
140
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 15 Vdc, ID = 4.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
) (1)
4 0 Ad
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
12
24
ns
Rise Time
—
24
48
Turn–Off Delay Time
—
47
94
Fall Time
) ( )
—
46
92
Turn–On Delay Time
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 6.0
) (1)
2 0 Ad
—
19
38
Rise Time
—
55
110
Turn–Off Delay Time
—
30
60
Fall Time
) ( )
—
40
80
Gate Charge
(VDS = 24 Vdc,D
(DS
VGS = 10 Vdc) (1)
4 0 Ad
—
17
24
nC
—
1.7
—
,
—
6.3
—
—
4.6
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 4.0 Adc, VGS = 0 Vdc) (1)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.1
0.89
1.5
—
Vdc
Reverse Recovery Time
(IS = 4.0 Adc, VGS
(S
dIS/dt = 100 A/
μ
s) (1)
4 0 Ad
trr
ta
tb
—
39
—
ns
—
20
—
,
—
19
—
Reverse Recovery Stored Charge
QRR
—
0.042
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Max limit – Typ
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