- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371126 > MMFT5P03HDT3 (MOTOROLA INC) TMOS P-CHANNEL FIELD FEECT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MMFT5P03HDT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| 中文描述： | 5.2 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | MMFT5P03HDT3 |
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (
°
C)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
2
6
10
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
00.1
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
VDS
≥
10 V
–55
°
C
3
25
°
C
ID = 4 A
TJ = 25
°
C
0
4
8
0
– 25
0
25
50
75
100
125
150
0
6
12
30
VGS = 0 V
TJ = 125
°
C
TJ = 25
°
C
VGS = 4.5 V
100
18
100
°
C
4
8
6
2
10 V
8
6
4
2
0
TJ = 100
°
C
0.3
0.2
0.1
0
0.3
0.2
0
8
6
4
2
02
2.5
4
3.5
4.5
0.1
0.5
1
2
1.5
VGS = 10 V
ID = 2 A
8 V
6 V
0
0.4
0.8
1.6
1.2
2
TJ = 25
°
C
3.1 V
VGS = 10 V
3.5 V
3.3 V
4.5 V
3.7 V
3.9 V
4.1 V
4.3 V
2.7 V
10
10
3
7
5
1
24
0.1
1
10
25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMFT5P03HD | 30V N-Channel PowerTrench MOSFET |
| MMFT5P03HDT3 | 30V N-Channel PowerTrench MOSFET |
| MMFT5P03HD | TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMG05N60D | POWERLUX IGBT |
| MMG05N60D | Insulated Gate Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT6N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMFT960T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 |
| MMFT960T1G | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMFTN123 | 制造商:Diotec Semiconductor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。