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參數(shù)資料
| 型號(hào)： | MMFT5P03HDT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封裝： | MINIATURE, CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 198K |
| 代理商： | MMFT5P03HDT3 |
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Max
30
30
±
20
40
3.13
25
5.2
4.1
26
Unit
V
V
V
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
mJ
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
Minimum
FR–4 or G–10 PCB
10 seconds
ID
ID
IDM
TJ, Tstg
EAS
80
1.56
12.5
3.7
2.9
19
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
– 55 to 150
250
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