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參數資料
| 型號： | MMSF3205 |
| 廠商： | Motorola, Inc. |
| 英文描述： | SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS |
| 中文描述： | 功率MOSFET單TMOS是20伏11安培 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 106K |
| 代理商： | MMSF3205 |
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Max
20
20
±
12
50
2.5
20
11
8.0
55
Unit
V
V
V
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
mJ
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
Minimum
FR–4 or G–10 PCB
10 seconds
ID
ID
IDM
TJ, Tstg
EAS
80
1.56
12.5
8.6
6.4
43
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 11 Apk, L = TBD mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
– 55 to 150
TBD
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| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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