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參數(shù)資料
型號: MMSF3205
廠商: Motorola, Inc.
英文描述: SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS
中文描述: 功率MOSFET單TMOS是20伏11安培
文件頁數(shù): 3/6頁
文件大小: 106K
代理商: MMSF3205
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
TBD
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70
°
C)
Gate–Body Leakage Current (VGS =
±
12 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
1.0
5.0
μ
Adc
IGSS
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.6
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 11 Adc)
(VGS = 2.5 Vdc, ID = 8.6 Adc)
RDS(on)
TBD
TBD
15
25
m
On–State Drain Current
(VDS
5.0 V, VGS = 4.5 V)
ID(on)
20
A
Forward Transconductance (VDS = 10 Vdc, ID = 11 Adc)
gFS
40
TBD
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
16 Vdc V
Ciss
Coss
Crss
TBD
TBD
pF
Output Capacitance
TBD
TBD
Transfer Capacitance
TBD
TBD
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 6.0
) (1)
1 0 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
TBD
TBD
ns
Rise Time
TBD
TBD
Turn–Off Delay Time
TBD
TBD
Fall Time
) ( )
TBD
TBD
Gate Charge
See Figure 8
(VDS = 10 Vdc,D
(DS
VGS = 4.5 Vdc) (1)
TBD
TBD
nC
TBD
,
TBD
TBD
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.1 Adc, VGS = 0 Vdc) (1)
(IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
TBD
TBD
1.2
Vdc
Reverse Recovery Time
See Figure 15
(IS = 2.1 Adc, VGS
(S
dIS/dt = 100 A/
μ
s) (1)
2 1 Ad
trr
ta
tb
TBD
TBD
ns
TBD
,
TBD
Reverse Recovery Stored Charge
QRR
TBD
μ
C
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
Max limit – Typ
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