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參數資料
| 型號： | MMSF5N03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
| 中文描述： | 5 A, 30 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 294K |
| 代理商： | MMSF5N03HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
—
34
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
—
2.0
5.0
3.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
—
—
0.033
0.04
0.040
0.050
Ohms
Forward Transconductance (VDS = 3 Vdc, ID = 2.5 Adc)
gFS
3.0
8.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1207
1680
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
—
354
490
Transfer Capacitance
—
62
120
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
20
40
ns
Rise Time
(VDD = 15 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc,
—
108
216
Turn–Off Delay Time
—
36
72
Fall Time
—
37
74
Turn–On Delay Time
RG = 9.1
)
—
11
22
Rise Time
(VDD = 15 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc,
—
36
72
Turn–Off Delay Time
—
68
136
Fall Time
—
38
76
Gate Charge
See Figure 8
VGS = 10 Vdc)
—
15.2
21
nC
(VDS = 24 Vdc, ID = 5.0 Adc,
—
3.4
—
—
6.6
—
—
5.6
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 5 Adc, VGS = 0 Vdc)
(IS = 5 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.88
0.77
1.3
—
Vdc
Reverse Recovery Time
See Figure 15
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
33
—
ns
(IS = 5.0 Adc, VGS = 0 Vdc,
—
21
—
—
12
—
Reverse Recovery Stored Charge
QRR
—
0.037
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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