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參數(shù)資料
| 型號： | MMSF5N03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
| 中文描述： | 5 A, 30 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 294K |
| 代理商： | MMSF5N03HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
0
0
0.2
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.6
0.8
2
0
4
6
10
Figure 1. On–Region Characteristics
ID
2
2.2
2.4
2.6
2.8
3.8
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
1
2
3
4
10
0.12
0.16
0.2
0
2
4
6
8
10
0.03
0.0375
0.0425
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
1
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
ID = 5 A
1
1.2
4.5 V
3.8 V
3.1 V
2.4 V
3
1.4
1.6
1.8
3.2
3.4
3.6
0.08
5
6
7
8
9
10 V
–50
–25
0
25
50
75
100
125
150
TJ = 125
°
C
8
0.04
0.035
2
0
0.8
0
10
20
30
4
6
10
8
2
0.04
0.0325
10
100
°
C
25
°
C
ID = 2.5 A
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