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參數資料
| 型號： | MR18R162GAF0-CT9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| 中文描述： | （16Mx16顯示）× 2（4/8/16）件RIMM的模塊，基于256Mb阿芯片，32秒銀行，16K/32ms參考，為2.5V |
| 文件頁數： | 7/16頁 |
| 文件大小： | 419K |
| 代理商： | MR18R162GAF0-CT9 |
Page 6
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Absolute Maximum Ratings
DC Recommended Electrical Conditions
Table 4: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
- 0.3
V
DD
+ 0.3
V
V
DD,ABS
Voltage on VDD with respect to Gnd
- 0.5
V
DD
+ 1.0
V
T
STORE
Storage temperature
- 50
100
°
C
T
PLATE
Plate temperature
-
92
°
C
Table 5: DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Min
Max
Unit
V
DD
Supply voltage
2.50 - 0.13
2.50 + 0.13
V
V
CMOS
CMOS I/O power supply at pad for 2.5V controllers:
CMOS I/O power supply at pad for 1.8V controllers:
V
DD
1.8 - 0.1
V
DD
1.8 + 0.2
V
V
V
REF
Reference voltage
1.4 - 0.2
1.4 + 0.2
V
V
SPD
Serial Presence Detector- Positive power supply
2.2
3.6
V
Table 6: RIMM Module Capacity and Number of RDRAM device
RIMM Module Capacity:
512/576MB
256/288MB
128/144MB
64/72MB
Number of 256/288Mb RDRAM devices
16
8
4
2
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