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參數資料
| 型號： | MR18R162GAF0-CT9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| 中文描述： | （16Mx16顯示）× 2（4/8/16）件RIMM的模塊，基于256Mb阿芯片，32秒銀行，16K/32ms參考，為2.5V |
| 文件頁數： | 8/16頁 |
| 文件大小： | 419K |
| 代理商： | MR18R162GAF0-CT9 |
Page 7
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
RIMM Module Current Profile
Table 7: RIMM Module Current Profile
I
DD
RIMM Module Capacity
512/576MB
256/288MB
128/144MB
64/72MB
Unit
Number of 256/288Mb RDRAM
devices
16
8
4
2
RIMM Module power
conditions
a
Freq
Max
Max
Max
Max
I
DD1
One RDRAM device in Read
b
,
balance in NAP mode
-1066
- /853
c
- /821
- /805
- /797
mA
-800
620/670
588/638
572/622
564/614
I
DD2
One RDRAM device in Read
b
,
balance in Standby mode
-1066
- /2818
- /1738
- /1198
- /928
mA
-800
1760/1810
1120/1170
800/850
640/690
I
DD3
One RDRAM device in Read
b
,
balance in Active mode
-1066
- /4018
- /2298
- /1438
- /1008
mA
-800
2360/2410
1400/1450
920/970
680/730
I
DD4
One RDRAM device in Write,
balance in NAP mode
-1066
- /944
- /912
- /896
- /888
mA
-800
680/740
648/708
632/692
624/684
I
DD5
One RDRAM device in Write,
balance in Standby mode
-1066
- /2909
- /1829
- /1289
- /1019
mA
-800
1820/1880
1180/1240
860/920
700/760
I
DD6
One RDRAM device in Write,
balance in Active mode
-1066
- /4109
- /2389
- /1529
- /1099
mA
-800
2420/2480
1460/1520
980/1040
740/800
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.
b. I/O current is a function of the % of 1
’
s, to add I/O power for 50% 1
’
s for a X16 need to add 257mA or 290mA for X18 ECC module for the following:
V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
- 0.5V.
c. Current values represent X16(Non-Ecc) / X18(Ecc)
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