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參數(shù)資料
| 型號(hào)： | MRF1570NT1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1366-05, 8 PIN |
| 文件頁數(shù)： | 15/23頁 |
| 文件大小： | 616K |
| 代理商： | MRF1570NT1 |
22
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN211A: Field Effect Transistors in Theory and Practice
AN215A: RF Small-Signal Design Using Two-Port Parameters
AN721: Impedance Matching Networks Applied to RF Power Transistors
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
9
June 2008
Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance
values in the functional test table on p. 2
Replaced Case Outline 1366-04 with 1366-05, Issue E, p. 1, 16-18. Removed Drain-ID label from View
Y-Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min,
respectively.
Replaced Case Outline 1366A-02 with 1366A-03, Issue D, p. 1, 19-21. Removed Drain-ID label from View
Y-Y. Removed Surface Alignment tolerance label for cross hatched section on View Y-Y. Added Pin 9
designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added
dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3.
Added Product Documentation and Revision History, p. 22
10
June 2009
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 22
Added Electromigration MTTF Calculator availability to Product Software, p. 22
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PDF描述 |
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| MRF1570FNT1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF1570T1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF158 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF175GV | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1570NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1570T1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF157MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF158 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 2Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF160 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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