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參數資料
| 型號： | MRF1570T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | PLASTIC, CASE 1366-04, 8 PIN |
| 文件頁數： | 1/20頁 |
| 文件大小： | 480K |
| 代理商： | MRF1570T1 |
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INFORMA
TION
Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF1570T1 MRF1570FT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 10 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Broadband -Full Power Across the Band: 135-175 MHz
400-470 MHz
Broadband Demonstration Amplifier Information Available Upon Request
200_C Capable Plastic Package
Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
+0.5, +40
Vdc
Gate-Source Voltage
VGS
± 20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
165
0.5
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.75
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1570T1
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
470 MHz, 70 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366-04, STYLE 1
TO-272-8 WRAP
PLASTIC
MRF1570T1
MRF1570FT1
CASE 1366A-02, STYLE 1
TO-272-8
PLASTIC
MRF1570FT1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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