- 您現在的位置：買賣IC網 > PDF目錄98036 > MRF1570T1 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 PDF資料下載
參數資料
| 型號： | MRF1570T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | PLASTIC, CASE 1366-04, 8 PIN |
| 文件頁數： | 6/20頁 |
| 文件大小： | 480K |
| 代理商： | MRF1570T1 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
14
RF Device Data
Freescale Semiconductor
MRF1570T1 MRF1570FT1
MOUNTING
The specified maximum thermal resistance of 0.75°C/W
assumes a majority of the 0.170″ x 0.608″ source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large -signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, “RF Small - Signal
Design Using Two-Port Parameters” for a discussion of two
port network theory and stability.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF158 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF175GV | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18060BLR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18060BLSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18085BLSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF157MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF158 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 2Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF160 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF16006 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 60V 1A 3PIN CASE 395C-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF16030 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:RF POWER TRANSISTOR NPN SILICON |
發布緊急采購，3分鐘左右您將得到回復。