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參數資料
型號: MRF1570T1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: PLASTIC, CASE 1366-04, 8 PIN
文件頁數: 3/20頁
文件大小: 480K
代理商: MRF1570T1
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HIVE
INF
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RMA
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ARCHIVE
INFORMA
TION
MRF1570T1 MRF1570FT1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 450 - 520 MHz
9
15
Pout, OUTPUT POWER (WATTS)
Figure 25. Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
90
0
VDD = 12.5 Vdc
500 MHz
450 MHz
470 MHz
520 MHz
10
20
30
40
50
70
80
60
14
13
12
11
10
20
70
Pout, OUTPUT POWER (WATTS)
Figure 26. Drain Efficiency versus Output Power
,DRAIN
EFFICIENCY
(%)
η
90
VDD = 12.5 Vdc
500 MHz
470 MHz
450 MHz
520 MHz
10
20
30
40
50
70
80
60
50
40
30
1600
50
90
IDQ, BIASING CURRENT (mA)
Figure 27. Output Power versus Biasing Current
P out
,OUTPUT
POWER
(W
ATTS)
500 MHz
450 MHz
470 MHz
520 MHz
VDD = 12.5 Vdc
Pin = 38 dBm
80
70
60
400
800
1200
1600
40
80
IDQ, BIASING CURRENT (mA)
Figure 28. Drain Efficiency versus Biasing Current
500 MHz
450 MHz
470 MHz
520 MHz
VDD = 12.5 Vdc
Pin = 38 dBm
70
60
50
400
800
1200
,DRAIN
EFFICIENCY
(%)
η
30
100
Figure 29. Output Power versus Supply Voltage
P out
,OUTPUT
POWER
(W
ATTS)
10
VDD, SUPPLY VOLTAGE (VOLTS)
Pin = 38 dBm
IDQ = 800 mA
450 MHz
470 MHz
11
12
13
14
15
90
80
70
60
50
40
520 MHz
500 MHz
40
80
Figure 30. Drain Efficiency versus Supply Voltage
,DRAIN
EFFICIENCY
(%)
η
10
VDD, SUPPLY VOLTAGE (VOLTS)
Pin = 38 dBm
IDQ = 800 mA
470 MHz
11
12
13
14
15
520 MHz
500 MHz
450 MHz
70
60
50
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