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參數(shù)資料
| 型號： | MRF19045R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 389K |
| 代理商： | MRF19045R3 |
MRF19045R3 MRF19045LR3 MRF19045SR3 MRF19045LSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA
Multi-carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: -50 dBc @ 30 kHz BW
IM3 — -37 dBc
100% Tested Under 2-Carrier N-CDMA
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads, L Suffix Indicates
40″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC
1.65
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19045/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF19045R3
MRF19045LR3
MRF19045SR3
MRF19045LSR3
1990 MHz, 45 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465E-04, STYLE 1
NI-400
MRF19045R3, MRF19045LR3
CASE 465F-04, STYLE 1
NI-400S
MRF19045SR3, MRF19045LSR3
Motorola, Inc. 2004
REV 5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19045S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF19045SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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