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參數(shù)資料
| 型號(hào)： | MRF19045R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 389K |
| 代理商： | MRF19045R3 |
MRF19045R3 MRF19045LR3 MRF19045SR3 MRF19045LSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
5
10
15
20
25
30
35
1900
1930
1960
1990
2020
60
50
40
30
20
10
0
Figure 3. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
13.5
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
G
ps
,POWER
GAIN
(dB)
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
IM3
(dBc),
ACPR
(dBc)
0
5
10
15
20
25
30
35
40
12345
6789
10
11
12
70
65
60
55
50
45
40
35
30
η
Gps
ACPR
IM3
η
Gps
ACPR
IM3
IRL
f, FREQUENCY (MHz)
IM3
(dBc),
ACPR
(dBc),
IRL
(dB)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
55
50
45
40
35
30
01
9
10
11
12
350 mA
450 mA
700 mA
550 mA
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
23
4
5
6
7
8
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
01
9
10
11
12
23
4
5
6
7
8
70
55
65
60
50
45
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2Carrier NCDMA)
350 mA
450 mA
700 mA
550 mA
01
9
10
11
12
23
4
5
6
7
8
350 mA
450 mA
700 mA
550 mA
14.0
14.5
15.0
15.5
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
1.2288 MHz Source Channel Bandwidth
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
VDD = 26 Vdc, IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
0
10
20
30
40
50
60
70
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
11
12
13
14
15
16
17
Gps
η
Pout
P1dB
P3dB
Pin, INPUT POWER (WATTS CW)
,DRAIN
EFFICIENCY
(%),
η
P
,
OUTPUT
POWER
(W
A
TTS
CW)
out
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
IDQ = 550 mA
f = 1960 MHz
相關(guān)PDF資料 |
PDF描述 |
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| MRF19085R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19045S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF19045SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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