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參數資料
| 型號： | MRF19045R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁數： | 5/12頁 |
| 文件大小： | 389K |
| 代理商： | MRF19045R3 |
MRF19045R3 MRF19045LR3 MRF19045SR3 MRF19045LSR3
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 550 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.2
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
1.8
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
Gps
13
14.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
η
21
23.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth
Centered at f1 -2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier
Channel Power)
IM3
—
-37
-35
dBc
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith
Centered at f1 -885 kHz and f2 +885 kHz)
ACPR
—
-51
-45
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
IRL
—
-16
-9
dB
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz)
P1dB
—
45
—
W
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 45 W CW, IDQ = 550 mA,
f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF19045S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF19045SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF19060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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