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參數(shù)資料
| 型號： | MRF21045R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 406K |
| 代理商： | MRF21045R3 |
MRF21045R3 MRF21045LR3 MRF21045SR3 MRF21045LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.19
0.21
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
3
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.8
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability
on CCDF.
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
13.5
15
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
21
23.5
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz.)
IM3
—
-37.5
-35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz.)
ACPR
—
-41
-38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
-12
-9
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 500 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21045S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21060 | 制造商:Motorola Inc 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR |
| MRF21060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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