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參數資料
型號: MRF21125SR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數: 5/12頁
文件大小: 437K
代理商: MRF21125SR3
RF Device Data
Freescale Semiconductor
MRF21125R3 MRF21125SR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
65
Vdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
10.8
S
Gate Threshold Voltage
(VDS = 10 V, ID = 300 μA)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 1300 mA)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, ID = 1 A)
VDS(on)
0.12
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
5.4
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth, IM3 measured
in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Gps
12
13
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
η
17
18
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 -10 MHz and f2 +10 MHz referenced to
carrier channel power.)
IM3
-43
-40
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 -5 MHz and f2 +5 MHz referenced to
carrier channel power.)
ACPR
-45
-40
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
IRL
-12
-9.0
dB
1. Part internally matched both on input and output.
(continued)
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