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參數資料
| 型號： | MRFG35002N6T1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 466-03, PLD1.5, 4 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 188K |
| 代理商： | MRFG35002N6T1 |
MRFG35002N6T1 replaced by MRFG35002N6AT1.
MRFG35002N6T1
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, IDQ =
65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth
1.5 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
RoHS Compliant.
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
8
Vdc
Gate-Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
22
dBm
Storage Temperature Range
Tstg
-65 to +150
°C
Channel Temperature (1)
Tch
175
°C
Operating Case Temperature Range
TC
-20 to +85
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
RθJC
15.2
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
LIFETIME
BUY
LAST
ORDER
8
DEC
07
LAST
SHIP
8
JUN
08
Document Number: MRFG35002N6
Rev. 2, 1/2008
Freescale Semiconductor
Technical Data
3.5 GHz, 1.5 W, 6 V
POWER FET
GaAs PHEMT
MRFG35002N6T1
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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| MRFG35005MT1 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35010AR5 | C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRFG35002N6T1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003ANR5 | 功能描述:射頻GaAs晶體管 3.5GHZ 3W 12V GAASPLD1.5 RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| MRFG35003ANT1 | 功能描述:射頻GaAs晶體管 3.5GHZ 3W 12V GAASPLD1.5 RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| MRFG35003M6R5 | 功能描述:MOSFET RF 3.5GHZ 3W 6V 1.5-PLD RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35003M6T1 | 功能描述:MOSFET RF 3.5GHZ 3W 6V 1.5-PLD RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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