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參數資料
| 型號： | MSA1162GT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Amplifier Transistors |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318D-04, SC-59, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | MSA1162GT1 |
Semiconductor Components Industries, LLC, 2003
September, 2003 Rev. 4
Publication Order Number:
MSA1162GT1/D
1
MSA1162GT1, MSA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
Moisture Sensitivity Level: 1
ESD Rating: TBD
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
(BR)CBO
60
Vdc
CollectorEmitter Voltage
V
(BR)CEO
50
Vdc
EmitterBase Voltage
V
(BR)EBO
7.0
Vdc
Collector Current Continuous
I
C
100
mAdc
Collector Current Peak
I
C(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°
C
Storage Temperature
T
stg
55 to
+150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise
noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage (I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
50
Vdc
CollectorBase Breakdown Voltage (I
C
=
10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage (I
E
=
10 Adc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
CollectorBase Cutoff Current (V
CB
= 45
Vdc, I
E
= 0)
I
CBO
0.1
Adc
CollectorEmitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80
°
C)
I
CEO
0.1
2.0
1.0
Adc
Adc
mAdc
DC Current Gain (Note 1)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc) MSA1162
YT1
MSA1162GT1
h
FE
120
200
240
400
CollectorEmitter Saturation Voltage (I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
0.5
Vdc
CurrentGain Bandwidth Product
(I
C
= 1 mA, V
CE
= 10.0 V, f = 10 MHz)
1. Pulse Test: Pulse Width
≤
300 s, D.C.
≤
2%.
f
T
80
MHz
SC59
CASE 318D
STYLE 1
MARKING DIAGRAM
1
2
3
62x M
62
x
M
= Specific Device Code
= G or Y
= Date Code
COLLECTOR
3
2
BASE
1
EMITTER
Device
Package
Shipping
ORDERING INFORMATION
MSA1162GT1
SC59
3000/Tape & Reel
The “T1” suffix refers to a 7 inch reel.
MSA1162YT1
SC59
3000/Tape & Reel
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MSA1162GT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Amplifier Transistors |
| MSA1162GT1G | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSA1162YT1 | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSA1162YT1G | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSA1205MD-3W | 制造商:MORNSUN 制造商全稱:MORNSUN 功能描述:DUAL/SINGLE OUTPUT DIP DC-DC CONVERTER |
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