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參數(shù)資料
型號: MSA1162GT1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: General Purpose Amplifier Transistors
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 318D-04, SC-59, 3 PIN
文件頁數(shù): 4/4頁
文件大小: 44K
代理商: MSA1162GT1
MSA1162GT1, MSA1162YT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SC59
CASE 318D04
ISSUE F
S
G
H
D
C
B
L
A
1
3
2
J
K
DIM
A
B
C
D
G
H
J
K
L
S
MIN
2.70
1.30
1.00
0.35
1.70
0.013
0.09
0.20
1.25
2.50
MAX
3.10
1.70
1.30
0.50
2.10
0.100
0.18
0.60
1.65
3.00
MIN
MAX
0.1220
0.0669
0.0511
0.0196
0.0826
0.0040
0.0070
0.0236
0.0649
0.1181
INCHES
0.1063
0.0512
0.0394
0.0138
0.0670
0.0005
0.0034
0.0079
0.0493
0.0985
MILLIMETERS
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
2.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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PUBLICATION ORDERING INFORMATION
JAPAN
: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone
: 81357733850
ON Semiconductor Website
: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MSA1162GT1/D
Thermal Clad is a trademark of the Bergquist Company.
Literature Fulfillment
:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone
: 3036752175 or 8003443860 Toll Free USA/Canada
Fax
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MSA1162GT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Amplifier Transistors
MSA1162GT1G 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSA1162YT1 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSA1162YT1G 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSA1205MD-3W 制造商:MORNSUN 制造商全稱:MORNSUN 功能描述:DUAL/SINGLE OUTPUT DIP DC-DC CONVERTER
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