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參數資料
| 型號： | MSA1162GT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Amplifier Transistors |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318D-04, SC-59, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 44K |
| 代理商： | MSA1162GT1 |
MSA1162GT1, MSA1162YT1
http://onsemi.com
2
P
D
=
T
J(max)
T
A
R
JA
P
D
=
150
°
C 25
°
C
370
°
C/W
= 338 milliwatts
The soldering temperature and time should not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the maxi-
mum temperature gradient should be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and re-
sult in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied dur-
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
INFORMATION FOR USING THE SC59 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
SC59 POWER DISSIPATION
The power dissipation of the SC59 is a function of the
pad size. This can vary from the minimum pad size for sol-
dering to the pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T
J(max)
, the maximum rated junction temperature
of the die, R
JA
, the thermal resistance from the device
junction to ambient; and the operating temperature, T
A
. Us-
ing the values provided on the data sheet, P
D
can be calcu-
lated as follows.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T
A
of 25
°
C, one
can calculate the power dissipation of the device which in
this case is 338 milliwatts.
The 370
°
C/W assumes the use of the recommended foot-
print on a glass epoxy printed circuit board to achieve a
power dissipation of 338 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad
. Using a board material such
as Thermal Clad, the power dissipation can be doubled us-
ing the same footprint.
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are sub-
jected.
Always preheat the device.
The delta temperature between the preheat and solder-
ing should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum tem-
perature ratings as shown on the data sheet. When us-
ing infrared heating with the reflow soldering method,
the difference should be a maximum of 10
°
C.
mm
inches
0.039
1.0
0.094
2.4
0.8
0.031
0.95
0.037
0.95
0.037
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MSA1162GT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Amplifier Transistors |
| MSA1162GT1G | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSA1162YT1 | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSA1162YT1G | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSA1205MD-3W | 制造商:MORNSUN 制造商全稱:MORNSUN 功能描述:DUAL/SINGLE OUTPUT DIP DC-DC CONVERTER |
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