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參數資料
| 型號： | MSAFX10N90A |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 文件頁數： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | MSAFX10N90A |
MSAFX10N90A
900 Volts
10 Amps
1.1
W
Features
Ultrafast body diode
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ T
J
≥
25
°
C
Drain-to-Gate Breakdown Voltage
@ T
J
≥
25
°
C, R
GS
= 1 M
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25
°
C
Tj=
100
°
C
Peak Drain Current, pulse width limited by T
Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ I
S
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
, T
J
≤
150
°
C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
BV
DSS
900
Volts
BV
DGR
V
GS
V
GSM
I
D25
I
D100
900
+/-20
+/-30
10
6
Volts
Volts
Volts
Amps
I
DM
I
AR
E
AR
E
AS
dv/dt
40
10
30
tbd
5.0
Amps
Amps
mJ
mJ
V/ns
P
D
T
j
T
stg
I
S
I
SM
θ
JC
300
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
10
40
0.25
Maximum Ratings @ 25
°
C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0944.PDF
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DRAIN
SOURCE
GATE
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