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參數資料
型號: MT46H32M32LGCM-5IT:A
元件分類: DRAM
英文描述: 32M X 32 DDR DRAM, 5 ns, PBGA90
封裝: 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
文件頁數: 1/95頁
文件大小: 3231K
Mobile Low-Power DDR SDRAM
MT46H64M16LF – 16 Meg x 16 x 4 Banks
MT46H32M32LF – 8 Meg x 32 x 4 Banks
Features
VDD/VDDQ = 1.70–1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data—one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 161
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
On-chip temp sensor to control self refresh rate
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
Clock Rate (MHz)
Access Time
-5
200
5.0ns
-54
185
5.0ns
-6
166
5.5ns
-75
133
6.0ns
Options
Marking
VDD/VDDQ
– 1.8V/1.8V
H
Configuration
– 64 Meg x 16 (16 Meg x 16 x 4 banks)
64M16
– 32 Meg x 32 (8 Meg x 32 x 4 banks)
32M32
Row-size option
– JEDEC-standard option
LF
– Reduced page-size option1
LG
Plastic green package
– 60-ball VFBGA (10mm x 11.5mm)2
CK
– 90-ball VFBGA (10mm x 13mm)3
CM
Timing – cycle time
– 5ns @ CL = 3
-5
– 5.4ns @ CL = 3
-54
– 6ns @ CL = 3
-6
– 7.5ns @ CL = 3
-75
Power
– Standard IDD2/IDD6
None
– Low-power IDD2/IDD6
L
Operating temperature range
– Commercial (0 to +70C)
None
– Industrial (–40C to +85C)
IT
Design revision
:A
Notes: 1. Contact factory for availability.
2. Only available for x16 configuration.
3. Only available for x32 configuration.
1Gb: x16, x32 Mobile LPDDR SDRAM
Features
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
相關PDF資料
PDF描述
MT46HC32M16LFCX-75:B 32M X 16 DDR DRAM, 7.5 ns, PBGA90
MT46HC32M16LGCM-54IT:B 32M X 16 DDR DRAM, 5.4 ns, PBGA90
MT47H32M16BT-37VL:A 32M X 16 DDR DRAM, 0.5 ns, PBGA92
MT47H64M16HQ-3IT:G 64M X 16 DDR DRAM, 0.4 ns, PBGA60
MT47H64M8CF-5EAT:F DDR DRAM, PBGA60
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