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參數(shù)資料
型號(hào)： MT46HC32M16LGCM-54IT:B
元件分類： DRAM
英文描述： 32M X 16 DDR DRAM, 5.4 ns, PBGA90
封裝： 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
文件頁(yè)數(shù)： 1/98頁(yè)
文件大小： 3258K
Mobile Low-Power DDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 Banks
MT46H16M32LF – 4 Meg x 32 x 4 Banks
Features
VDD/VDDQ = 1.70–1.95V
1.2V I/O option VDDQ = 1.14–1.30V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)architec-
ture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs;center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data—one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 16
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
On-chip temp sensor to control self refresh rate
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
Clock Rate (MHz)
Access Time
-5
200
5.0ns
-54
185
5.0ns
-6
166
5.0ns
-75
133
6.0ns
Options
Marking
VDD/VDDQ
– 1.8V/1.8V
H
HC
Configuration
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
32M16
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
16M32
Row-size option
– JEDEC-standard option
LF
– Reduced page-size option1
LG
Plastic green package
– 60-ball VFBGA (8mm x 9mm)2
BF
– 90-ball VFBGA (10mm x 13mm)3
CM
– 90-ball VFBGA (9mm x 13mm)3
CX
Timing – cycle time
– 5ns @ CL = 3
-5
– 5.4ns @ CL = 3
-54
– 6ns @ CL = 3
-6
– 7.5ns @ CL = 3
-75
Power
– Standard IDD2/IDD6
None
– Low-power IDD2/IDD61
L
Operating temperature range
– Commercial (0 to +70C)
None
– Industrial (–40C to +85C)
IT
Design revision
:B
Notes: 1. Contact factory for availability.
2. Only available for x16 configuration.
3. Only available for x32 configuration.
512Mb: x16, x32 Mobile LPDDR SDRAM
Features
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
相關(guān)PDF資料
PDF描述
MT47H32M16BT-37VL:A 32M X 16 DDR DRAM, 0.5 ns, PBGA92
MT47H64M16HQ-3IT:G 64M X 16 DDR DRAM, 0.4 ns, PBGA60
MT47H64M8CF-5EAT:F DDR DRAM, PBGA60
MT48H16M16LFBF-10IT 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
MT48LC8M16A2BB-6ALIT:G 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V128M4 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
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