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參數資料
| 型號： | NCN6004AFTBR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 其它接口 |
| 英文描述： | Dual SAM/SIM Interface Integrated Circuit |
| 中文描述： | SPECIALTY INTERFACE CIRCUIT, PQFP48 |
| 封裝： | PLASTIC, TQFP-48 |
| 文件頁數： | 24/40頁 |
| 文件大小： | 329K |
| 代理商： | NCN6004AFTBR2 |
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NCN6004A
http://onsemi.com
24
Since the output inductor L1 and the reservoir capacitor
C1 carry relative high peak current, low ESR devices must
be used to prevent the system from poor output voltage
ripple and low efficiency. Using ceramic capacitors, X5R or
X7R type, are recommended, splitting the 10 F in two
separate parts when there is a relative long distance between
the CRD_VCC_x output pin and the card VCC input. On the
other hand, the inductor shall have an ESR below 1.0 to
achieve the high efficiency over the full temperature range.
However, inductor with 2.0
ESR can be used when a slight
decrease of the efficiency is acceptable at system level.
Ton Toff
CRD_VCC Charged
Charge CRD_VCC
Next CRD_VCC Charge
Q1 / Q4
Q2 / Q3
IL
(Time is not to scale)
CRD_VCC
CRD_VCC Voltage Regulated
Ipeak
V
Q5/Q6
Figure 16. Theoretical DC/DC Operating
When the CRD_VCC is programmed to zero volt, or when
the card is extracted from the socket, the active pull down Q5
rapidly discharges the output reservoir capacitor, making
sure the output voltage is below 0.40 V when the card slides
across the contacts.
Based on the experiments carried out during the
NCN6004A characterization, the best comprise, at time of
printing
this
document,
4.7 F/10 V/ceramic/X7R capacitor in parallel to achieve
the CRD_VCC filtering. The ESR will not extend 50 m
is
to
use
two
over the temperature range and the combination of standard
parts provide an acceptable –20% to +20% tolerance,
together with a low cost. Table 6 shows a quick comparison
between the most common type of capacitors. Obviously,
the capacitor must be SMD type to achieve the extremely
low ESR and ESL necessary for this application.
Figure 17 illustrates the CRD_VCC ripple observed in the
NCN6004A demo board running with X7R ceramic
capacitors.
Table 6. Ceramic/Electrolytic Capacitors Comparison
Manufacturer
Type/Series
Format
Max Value
Tolerance
Typ. Z @ 500 kHz
MURATA
CERAMIC/GRM225
0805
10 F/6.3 V
-20% /+20%
30 m
MURATA
CERAMIC/GRM225
0805
4.7 F/6.3 V
-20% /+20%
30 m
VISHAY
Tantalum/594C/593C
1206
10 F/16 V
450 m
VISHAY
Electrolytic/94SV
1812
10 F/10 V
-20%/+20%
400 m
Miscellaneous
Electrolytic Low Cost
1812
10 F/10 V
-35%/+50%
2.0
相關PDF資料 |
PDF描述 |
|---|---|
| NCN6004A | Dual SAM/SIM Interface Integrated Circuit |
| NCN6010DTBR2 | SIM Card Supply and Level Shifter |
| NCN6010 | SIM Card Supply and Level Shifter |
| NCN6010D | SIM Card Supply and Level Shifter |
| NCN6010DTB | SIM Card Supply and Level Shifter |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NCN6004AFTBR2G | 功能描述:輸入/輸出控制器接口集成電路 2.7V POS/ATM Smart Card Interface RoHS:否 制造商:Silicon Labs 產品: 輸入/輸出端數量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray |
| NCN6010 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
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