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參數(shù)資料
| 型號： | NIS5112D1R2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 410K |
| 描述： | IC ELECTRONIC FUSE HOTSWAP 8SOIC |
| 標準包裝： | 1 |
| 功能： | 電子保險絲 |
| 輸入電壓： | 9 V ~ 18 V |
| 電流 - 輸出： | 2A |
| 工作溫度： | -40°C ~ 175°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | NIS5112D1R2GOSCT |
NIS5112
http://onsemi.com
8
There is an inherent delay in the turn on of the electronic
fuse, due to the method of gate drive used. The gate of the
power FET is charged through a high impedance resistor,
and from the time that the gate starts charging until the time
that it reaches its threshold voltage, there will be no
conduction. Once the gate reaches its threshold voltage, the
output current will begin a controlled ramp up phase.
This delay will be added to any timing delay due to the
enable/timer circuit. Figure 10 shows a simplified diagram
of the enable/timer circuit.
Figure 10. Simplified Schematic Diagram of the
Enable/Timer Circuit
+
Enabled
2.5 V
80 mA
Enable/
Timer
Thermal Protection Circuit
The temperature limit circuit senses the temperature of the
Power FET and removes the gate drive if the maximum level
is exceeded. The NIS5112 device has two different thermal
limit versions, autoretry and latch off.
AutoRetry Version
The device will shut down when the thermal limit
threshold is reached (T
J
= 135癈, typical) and will not turn
back on until the die temperature reduces down to 95癈
(40癈 hysteresis, typical). It will keep autoretrying until
the fault condition is removed or power is turnedoff.
LatchOff Version
For the latchoff version, the device will shut down when
the thermal limit threshold is reached (T
J
= 135癈, typical)
and will remain off until power is reset.
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