- 您現在的位置：買賣IC網 > PDF目錄361138 > NST30010MXV6T1G (ON SEMICONDUCTOR) Dual Matched General Purpose Transistor(雙通用晶體管) PDF資料下載
參數資料
| 型號： | NST30010MXV6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual Matched General Purpose Transistor(雙通用晶體管) |
| 中文描述： | 100 mA, 30 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, ULTRA SMALL, CASE 463A-01, 6 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 57K |
| 代理商： | NST30010MXV6T1G |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 0
1
Publication Order Number:
NST30010MXV6/D
NST30010MXV6T1G
Dual Matched General
Purpose Transistor
PNP Matched Pair
These transistors are housed in an ultrasmall SOT563 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
Features
Current Gain Matching to 10%
BaseEmitter Voltage Matched to 2 mV
DropIn Replacement for Standard Device
These are PbFree Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
30
V
CollectorBase Voltage
V
CBO
30
V
EmitterBase Voltage
V
EBO
5.0
V
Collector Current Continuous
I
C
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT563
CASE 463A
PLASTIC
1
6
Q
1
(1)
(2)
(3)
(4)
(5)
(6)
Q
2
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NST30010MXV6T1G SOT563
(PbFree)
4000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAMS
UU M
UU
M
= Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
1
相關PDF資料 |
PDF描述 |
|---|---|
| NST3946DW1T1 | Dual General Purpose Transistor |
| NST3946DXV6T5 | Dual General Purpose Transistor(雙通用晶體管) |
| NST3946DXV6T1D | Dual General Purpose Transistor |
| NST3946DXV6T1 | Dual General Purpose Transistor(雙通用晶體管) |
| NST489AMT1 | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications(大電流，表面安裝，NPN型，低VCE(sat)開關晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NST30010MXV6T1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Matched General Purpose Transistor |
| NST3904DP6T5G | 功能描述:兩極晶體管 - BJT LESHAN DUAL NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3904DXV6T | 制造商:ON Semiconductor 功能描述: |
| NST3904DXV6T1 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3904DXV6T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
發布緊急采購，3分鐘左右您將得到回復。