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參數資料
| 型號： | NST3946DW1T1 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual General Purpose Transistor |
| 中文描述： | 雙通用晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 168K |
| 代理商： | NST3946DW1T1 |
Semiconductor Components Industries, LLC, 2004
January, 2004 Rev. 2
1
Publication Order Number:
MBT3946DW1T1/D
MBT3946DW1T1
Dual General Purpose
Transistor
The MBT3946DW1T1 device is a spinoff of our popular
SOT23/SOT323 threeleaded device. It is designed for general
purpose amplifier applications and is housed in the SOT3636
surface mount package. By putting two discrete devices in one
package, this device is ideal for lowpower surface mount
applications where board space is at a premium.
h
FE
, 100300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7inch/3,000 Unit Tape and Reel
Device Marking: MBT3946DW1T1 = 46
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
(NPN)
(PNP)
V
CEO
40
40
Vdc
CollectorBase Voltage
(NPN)
(PNP)
V
CBO
60
40
Vdc
EmitterBase Voltage
(NPN)
(PNP)
V
EBO
6.0
5.0
Vdc
Collector Current Continuous
(NPN)
(PNP)
I
C
200
200
mAdc
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1)
T
A
= 25
°
C
P
D
150
mW
Thermal Resistance
JunctiontoAmbient
R
JA
833
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
SOT3636/SC88
CASE 419B
Style 1
123
654
Q
1
(1)
(2)
(3)
(4)
(5)
(6)
Q
2
MBT3946DW1T1*
Device
Package
Shipping
ORDERING INFORMATION
MBT3946DW1T1
SOT363
3000/Tape & Reel
*Q1 PNP
Q2 NPN
http://onsemi.com
46
d
46 = Specific Device Code
d
= Date Code
MARKING
DIAGRAM
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBT3946DW1T1G SOT363
3000/Tape & Reel
MBT3946DW1T2
SOT363
3000/Tape & Reel
MBT3946DW1T2G SOT363
3000/Tape & Reel
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| NST3946DXV6T1 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3946DXV6T1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| NST3946DXV6T1G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual Switching NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3946DXV6T5 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3946DXV6T5G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual Switching NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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