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參數(shù)資料
型號: PH3230
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-5
文件頁數(shù): 6/13頁
文件大小: 255K
代理商: PH3230
Philips Semiconductors
PH3230
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 25 June 2003
6 of 13
9397 750 10949
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
I
GSS
gate-source leakage current
R
DSon
drain-source on-state resistance
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10 mA; V
GS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
;
Figure 10
V
DS
= 30 V; V
GS
= 0 V
V
GS
=
±
16 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 8
and
9
V
GS
= 4.5 V; I
D
= 25 A;
Figure 9
30
1
-
-
-
-
-
1.9
-
0.1
3.2
5.5
-
2.5
1
10
3.7
7.3
V
V
μ
A
μ
A
m
m
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 50 A; V
GS
= 0 V;
Figure 14
t
rr
reverse recovery time
V
DS
= 10 V; I
D
= 25 A;
Figure 12
I
D
= 50 A; V
DD
= 10 V; V
GS
= 10 V;
Figure 15
39
-
-
-
-
-
-
-
-
-
-
55
75
16
14
4750 -
1160 -
630
25
50
90
26
-
-
-
-
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
Figure 13
-
-
-
-
-
V
DD
= 10 V; I
D
= 25 A; V
GS
= 10 V; R
G
= 4.7
-
-
0.85
60
0.98
-
V
ns
I
S
= 50 A; dI
S
/dt =
50 A/
μ
s; V
GS
= 0 V
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