| 型號(hào) | 廠商 | 描述 |
| pfc250-1005 2 3 4 |
PerFormanCe POWER | |
| pfc250-1012 2 3 4 |
PerFormanCe POWER | |
| pfc250-1015 2 3 4 |
PerFormanCe POWER | |
| pfc250-1024 2 3 4 |
PerFormanCe POWER | |
| pfc250-1048 2 3 4 |
PerFormanCe POWER | |
| pfc250-4000 2 3 4 |
PerFormanCe POWER | |
| pfc250-4001 2 3 4 |
PerFormanCe POWER | |
| pfc250-4004 2 3 4 |
PerFormanCe POWER | |
| pfc250-4350 2 3 4 |
PerFormanCe POWER | |
| pfc250-4530 2 3 4 |
PerFormanCe POWER | |
| pfc375 2 3 4 |
PerFormanCe POWER | |
| pfc375-1012 2 3 4 |
PerFormanCe POWER | |
| pfc375-1015 2 3 4 |
PerFormanCe POWER | |
| pfc375-1024 2 3 4 |
PerFormanCe POWER | |
| pfc375-1028 2 3 4 |
PerFormanCe POWER | |
| pfc375-1048 2 3 4 |
PerFormanCe POWER | |
| pfc375-4000 2 3 4 |
PerFormanCe POWER | |
| pfc375-4001 2 3 4 |
PerFormanCe POWER | |
| pfc375-4002 2 3 4 |
PerFormanCe POWER | |
| pfc375-4004 2 3 4 |
PerFormanCe POWER | |
| pfc375-4005 2 3 4 |
KPT06B12-8SF26F42 | |
| pfc375-4200 2 3 4 |
PerFormanCe POWER | |
| pfc375-4201 2 3 4 |
PerFormanCe POWER | |
| pfc375-4500 2 3 4 |
PerFormanCe POWER | |
| pga309 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Voltage Output PROGRAMMABLE SENSOR CONDITIONER | |
| pga309aipwr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Voltage Output PROGRAMMABLE SENSOR CONDITIONER | |
| pga309aipwt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Voltage Output PROGRAMMABLE SENSOR CONDITIONER | |
| ph1113-100 2 |
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty | |
| ph1214-8m |
Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz | |
| ph20100s 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | N-channel TrenchMOS standard level FET |
| ph2222 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN switching transistor |
| ph2222a 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN switching transistor |
| ph2226-50 |
Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz | |
| ph2323-1 2 |
CW Power Transistor, 1W 2.3 GHz | |
| ph2323-14 2 |
CW Power Transistor,14W 2.3 GHz | |
| ph2323-3 2 |
CW Power Transistor, 3.5W 2.3 GHz | |
| ph2323-5 2 |
Circular Connector; Body Material:Aluminum Alloy; Series:KPT01; No. of Contacts:24; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket RoHS Compliant: No | |
| ph2625l 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
| ph2729-150m 2 |
Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz, 100ms Pulse, 10% Duty | |
| ph2729-25m 2 |
RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY | |
| ph2729-65m 2 |
Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty 2.7 - 2.9 GHz | |
| ph2729-8sm 2 |
Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty 2.7 - 2.9 GHz | |
| ph3134-11s 2 |
Radar Pulsed Power Transistor, 11 W, lms Pulse, 10% Duty 3.1 - 3.4 GHz | |
| ph3134-2ol 2 |
Radar Pulsed Power Transistor, 2OW, 300ms Pulse, 10% Duty 3.1 - 3.4 GHz | |
| ph3134-30s 2 |
Radar Pulsed Power Transistor, 3OW, lms Pulse, 10% Duty 3.1 - 3.4 GHz | |
| ph3134-55l 2 |
Radar Pulsed Power Transistor, SW, 300ms Pulse, 10% Duty 3.1 - 3.4 GHz | |
| ph3134-65m 2 |
Radar Pulsed Power Transistor, 65W, 1OOms Pulse, 10% Duty 3.1 - 3.4 GHz | |
| ph3134-75s 2 |
T&B METHOD LUG | |
| ph3230s 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | N-channel TrenchMOS⑩ logic level FET |
| ph3230 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel enhancement mode field-effect transistor |