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參數(shù)資料
| 型號(hào)： | PH3230 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | PH3230 |
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Philips Semiconductors
PH3230
N-channel enhancement mode field-effect transistor
Product data
Rev. 03 — 25 June 2003
7 of 13
9397 750 10949
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 6.
T
j
= 25
°
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag79
0
20
40
60
80
100
ID
(A)
0
1
2
3
4
5
VDS (V)
3.5 V
VGS = 3 V
10 V
4 V
5 V
Tj = 25
°
C
03ag80
0
20
40
60
80
ID
(A)
0
1
2
3
4
VGS (V)
VDS > ID x RDSon
T
j
= 25
°
C
150
°
C
03ag85
0
10
20
30
0
20
40
60
ID (A)
RDSon
(m
)
3 V
VGS = 2.5 V
5 V
10 V
3.5 V
03ah32
0
0.6
1.2
1.8
-80
-20
40
100
160
Tj (
°
C)
a
a
R
DSon 25 C
°
)
---------------------------
=
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