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參數資料
| 型號： | PH3830L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 98 A, 30 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 92K |
| 代理商： | PH3830L |
Philips Semiconductors
PH3830L
N-channel TrenchMOS logic level FET
Product data
Rev. 03 — 2 March 2004
3 of 12
9397 750 12945
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 10 V
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa15
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03aa23
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
I
D 25 C
)
-------------------
100
%
×
=
003aaa377
10-1
1
10
102
103
10-1
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
100
μ
s
Limit RDSon = VDS / ID
tp = 10
μ
s
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相關代理商/技術參數 |
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| PH3830L,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH3830L | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V LFPAK |
| PH3830L115 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 98A 4-SOT-669 |
| PH3855L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PH3855L T/R | 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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