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參數資料
| 型號： | PH3855L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 24 A, 55 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 83K |
| 代理商： | PH3855L |
9397 750 13925
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 26 January 2005
3 of 12
Philips Semiconductors
PH3855L
N-channel TrenchMOS logic level FET
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 5 V
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Fig 3.
03aa16
0
40
80
120
0
50
100
150
200
T
mb
(
°
C)
P
der
(%)
03aa24
0
40
80
120
0
50
100
150
200
T
mb
(
°
C)
I
der
(%)
P
der
P
tot 25 C
)
------------------------
100
%
×
=
I
der
I
D 25 C
)
--------------------
100
%
×
=
03ar86
10
-1
1
10
10
2
1
10
10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10
μ
s
100
μ
s
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