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參數資料
| 型號： | PH3855L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 24 A, 55 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數： | 8/12頁 |
| 文件大小： | 83K |
| 代理商： | PH3855L |
9397 750 13925
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 26 January 2005
8 of 12
Philips Semiconductors
PH3855L
N-channel TrenchMOS logic level FET
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ar92
0
10
20
30
40
0
0.4
0.8
1.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
175
°
C
03ar93
10
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
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