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參數(shù)資料
| 型號： | PH3855L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 24 A, 55 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 83K |
| 代理商： | PH3855L |
9397 750 13925
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 26 January 2005
9 of 12
Philips Semiconductors
PH3855L
N-channel TrenchMOS logic level FET
7.
Package outline
Fig 14. Package outline SOT669 (LFPAK).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT669
MO-235
03-09-15
04-10-13
0
2.5
5 mm
scale
e
E1
b
c2
A2
A2
b
c
A
e
UNIT
DIMENSIONS (mm are the original dimensions)
mm
1.10
0.95
A3
A1
0.15
0.00
1.20
1.01
0.50
0.35
b2
4.41
3.62
b3
2.2
2.0
b4
0.9
0.7
0.25
0.19
c2
0.30
0.24
4.10
3.80
6.2
5.8
H
1.3
0.8
L2
0.85
0.40
L
1.3
0.8
L1
8
°
0
°
w
y
D
(1)
5.0
4.8
E
(1)
3.3
3.1
E1
(1)
D1
(1)
max
0.25
4.20
1.27
0.25
0.1
1
2
3
4
mounting
base
D1
c
Plastic single-ended surface mounted package (LFPAK); 4 leads
SOT669
E
b2
b3
b4
H
D
L2
L1
A
A
w
M
C
C
X
1/2
e
y C
θ
θ
(A )
3
L
A
A1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
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