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參數資料
| 型號： | PH6325L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 78.7 A, 25 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數： | 2/13頁 |
| 文件大小： | 138K |
| 代理商： | PH6325L |
Philips Semiconductors
PH6325L
N-channel TrenchMOS logic level FET
Preliminary data
Rev. 01 — 28 April 2004
2 of 13
9397 750 12307
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
[2]
Duty cycle is limited by the maximum junction temperature.
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
LFPAK
Description
Plastic single-ended surface mounting package; 4 leads
Version
SOT669
PH6325L
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
Min
-
-
-
-
-
-
55
55
Max
25
±
20
78.7
49.6
236
62.5
+150
+150
Unit
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
52
208
A
A
unclamped inductive load; I
D
= 34 A;
t
p
= 0.15 ms; V
DD
= 25 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
unclamped inductive load; I
D
= 3.4 A;
t
p
= 0.015 ms; V
DD
= 25 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
-
115
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1]
[2]
-
1.2
mJ
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