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參數資料
| 型號： | PH6325L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 78.7 A, 25 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數： | 8/13頁 |
| 文件大?。?/td> | 138K |
| 代理商： | PH6325L |
Philips Semiconductors
PH6325L
N-channel TrenchMOS logic level FET
Preliminary data
Rev. 01 — 28 April 2004
8 of 13
9397 750 12307
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
T
j
= 25
°
C and 150
°
C; V
DS
= 0 V
Fig 14. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
003aaa564
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
003aaa633
0
1000
2000
3000
4000
0
2
4
6
8
10
VGS (V)
C
(pF)
Ciss
Crss
003aaa565
0
10
20
30
40
0.2
0.4
0.6
0.8
1
VSD (V)
IS
(A)
25
°
C
Tj = 150
°
C
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