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參數資料
| 型號： | PHB100N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 3/13頁 |
| 文件大小： | 331K |
| 代理商： | PHB100N03LT |
Philips Semiconductors
PHB100N03LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 September 2000
3 of 13
9397 750 07309
Philips Electronics N.V. 2000. All rights reserved.
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Unclamped inductive load; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 5 V; starting T
j
= 25
°
C and 150
°
C.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Tmb (oC)
200
Pder
(%)
03ac83
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
Tmb(oC)
Ider
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ab18
1
10
102
103
10-1
1
10
102
VDS(V)
ID
(A)
D.C.
100 ms
10 ms
RDSon= VDS/ ID
1 ms
tp= 10
μ
s
100
μ
s
tp
tp
T
T
P
t
δ
=
03ab29
1
10
102
10-3
10-2
10-1
1
10
tp(ms)
IAS
(A)
Tjprior to avalanche = 150oC
25oC
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