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參數資料
| 型號： | PHB14NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS standard level FET |
| 中文描述： | 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 5/14頁 |
| 文件大小： | 269K |
| 代理商： | PHB14NQ20T |
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 March 2002
5 of 14
9397 750 09535
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 200 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 7 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
200
178
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
2
1
-
3
-
-
4
-
6
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
10
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
150
-
230
633
m
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 25 V; I
D
= 7 A;
Figure 14
I
D
= 14 A; V
DD
= 160 V;
V
GS
= 10 V;
Figure 13
6
12.1
-
S
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
-
-
-
-
-
-
-
-
-
-
38
4
13.3
1500
128
60
25
40
83
31
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 11
V
DD
= 30 V; R
D
= 10
;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 14 A; V
GS
= 0 V;
Figure 12
I
S
= 14 A;
dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
1.0
1.5
V
t
rr
Q
r
-
-
135
690
-
-
ns
nC
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