- 您現在的位置：買賣IC網 > PDF目錄382391 > PHC20306 (NXP SEMICONDUCTORS) Complementary enhancement mode MOS transistor PDF資料下載
參數資料
| 型號： | PHC20306 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary enhancement mode MOS transistor |
| 中文描述： | 8200 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SOT96-1, SO-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 55K |
| 代理商： | PHC20306 |
1998 Feb 18
3
Philips Semiconductors
Objective specification
Complementary enhancement
mode MOS transistor
PHC20306
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
Maximum permissible dissipation per MOS transistor. Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Maximum permissible dissipation per MOS transistor. Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted a on printed-circuit board
with an R
th a-tp
(ambient to tie-point) of 90 K/W.
5.
6.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per channel
V
DS
drain-source voltage (DC)
N-channel
P-channel
gate-source voltage (DC)
drain current (DC)
N-channel
P-channel
peak drain current
N-channel
P-channel
total power dissipation
30
30
±
20
V
V
V
V
GSO
I
D
open drain
T
s
= 80
°
C; note 1
8.2
5.6
A
A
I
DM
note 2
55
55
33
22.5
3.5
2.6
1.1
1.5
+150
+150
A
A
W
W
W
W
°
C
°
C
P
tot
T
s
= 80
°
C; note 3
T
amb
= 25
°
C; note 4
T
amb
= 25
°
C; note 5
T
amb
= 25
°
C; note 6
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
source current (DC)
N-channel
P-channel
peak pulsed source current
N-channel
P-channel
T
s
= 80
°
C
3.5
2.7
A
A
I
SM
note 2
14
10.8
A
A
相關PDF資料 |
PDF描述 |
|---|---|
| PHC20512 | Complementary enhancement mode MOS transistors |
| PHD18NQ10T | N-channel TrenchMOS transistor |
| PHD21N06LT | N-channel TrenchMOS transistor Logic level FET |
| PHD22NQ20T | N-channel TrenchMOS?? standard level FET |
| PHD22NQ20T-01 | N-channel TrenchMOS?? standard level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHC20512 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Complementary enhancement mode MOS transistors |
| PHC21025 | 制造商:NXP Semiconductors 功能描述:MOSFET Dual N/P-Ch 30V 3.5A/2.3A SOIC8 |
| PHC21025 /T3 | 功能描述:MOSFET TAPE-7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHC21025,118 | 功能描述:MOSFET TAPE-7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHC21025118 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 3.5A SOT96-1 |
發布緊急采購，3分鐘左右您將得到回復。