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參數資料
| 型號： | PHC20306 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary enhancement mode MOS transistor |
| 中文描述： | 8200 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SOT96-1, SO-8 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 55K |
| 代理商： | PHC20306 |
1998 Feb 18
5
Philips Semiconductors
Objective specification
Complementary enhancement
mode MOS transistor
PHC20306
Q
GD
gate-drain charge
N-channel
P-channel
V
DD
= 15 V; I
D
= 4 A
V
DD
=
15 V; I
D
=
2.8 A
6.5
tbf
nC
nC
Switching times
t
d(on)
turn-on delay time
N-channel
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
20 V;
I
D
=
1 A; R
gen
= 6
8
ns
P-channel
tbf
ns
t
r
rise time
N-channel
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
20 V;
I
D
=
1 A; R
gen
= 6
21
ns
P-channel
tbf
ns
t
on
turn-on switching time
N-channel
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
20 V;
I
D
=
1 A; R
gen
= 6
17
25
ns
P-channel
tbf
tbf
ns
t
d(off)
turn-off delay time
N-channel
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
20 V;
I
D
=
1 A; R
gen
= 6
19
ns
P-channel
tbf
ns
t
f
fall time
N-channel
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
20 V;
I
D
=
1 A; R
gen
= 6
9
ns
P-channel
tbf
ns
t
off
turn-off switching time
N-channel
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
20 V;
I
D
=
1 A; R
gen
= 6
40
60
ns
P-channel
tbf
tbf
ns
Source-drain diode
V
SD
source-drain diode forward
voltage
N-channel
P-channel
reverse recovery time
N-channel
P-channel
V
GD
= 0; I
S
=1.25 A
V
GD
= 0; I
S
=
1.25 A
1
1.3
V
V
t
rr
I
S
= 1.25 A; di/dt =
100 A/
μ
s
I
S
=
1.25 A; di/dt = 100 A/
μ
s
45
tbf
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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| PHC21025118 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 3.5A SOT96-1 |
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