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參數(shù)資料
| 型號： | PHN205 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel enhancement mode MOS transistor |
| 中文描述： | 6400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 88K |
| 代理商： | PHN205 |
1997 Oct 22
8
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
V
GD
= 0.
(1) T
amb
= 150
°
C; t
p
= 300
μ
s;
δ
= 0.
(2) T
amb
= 25
°
C; t
p
= 300
μ
s;
δ
= 0.
(3) T
amb
=
65
°
C; t
p
= 300
μ
s;
δ
= 0.
handbook, halfpage
IS
(A)
0
0.4
0.8
1.2
0
12
8
4
MGG347
VSD (V)
(1)
(2)
(3)
handbook, halfpage
10
0
2
4
6
8
3
10
2
10
MGG348
RDSon
(m
)
VGS (V)
(1)
(2)
(3)
(4)
(5)
Fig.11 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
T
amb
= 25
°
C; t
p
= 300
μ
s;
δ
= 0.
V
DS
≥
I
D
×
R
DSon
.
(1) I
D
= 0.5 A.
(2) I
D
= 1.6 A.
(3) I
D
= 3.2A.
(4) I
D
= 6.4 A.
(5) I
D
= 10 A.
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
V
GSth
at V
DS
= V
GS
; I
D
= 1 mA.
k
V
at T
j
GSth
at 25
°
C
V
=
handbook, halfpage
k
100
1.1
0.9
0.7
1.2
1
0.8
50
150
0
50
100
MGG349
Tj (
°
C)
handbook, halfpage
100
1.5
0
1
0.5
50
150
0
(1)
(2)
50
100
MGG359
Tj (
°
C)
k
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
(1) R
DSon
at V
GS
= 10 V; I
D
= 3.2 A.
(2) R
DSon
at V
GS
= 4.5 V; I
D
= 1.6 A.
k
R
at T
DSon
at 25
°
C
R
=
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|---|---|
| PHN210 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode TrenchMOS transistor |
| PHN210 /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode |
| PHN210T /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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