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參數(shù)資料
| 型號(hào)： | PHX18NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 3/15頁(yè) |
| 文件大小： | 293K |
| 代理商： | PHX18NQ20T |
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Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
3 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
V
GS
≥
4.5 V
Fig 1.
Normalized total power dissipation as a
function of ambient temperature.
Fig 2.
Normalized continuous drain current as a
function of ambient temperature.
T
amb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Pder
(%)
Tmb (oC)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
175
Ider
(%)
Tamb (oC)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ac74
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
RDSon = VDS / ID
D.C.
tp = 10
μ
s
100
μ
s
1 ms
10 ms
100 ms
tp
tp
T
T
P
t
δ
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| PHX18NQ20T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| PHX1N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP2N40E |
| PHX1N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version fo PHP1N50E |
| PHX1N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E |
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