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參數資料
| 型號： | PHX18NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數： | 5/15頁 |
| 文件大?。?/td> | 293K |
| 代理商： | PHX18NQ20T |
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
5 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
200
178
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 200 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 8 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
2
1.2
3
4
6
V
V
V
I
DSS
drain-source leakage current
0.05
10
10
100
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
130
180
450
m
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 25 V; I = 8 A;
Figure 11
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
15
S
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
t
on
t
off
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain (Miller) charge
turn-on time
turn-off time
1850
170
91
40
9
22
3
92
_
_
_
_
pF
pF
pF
nC
nC
nC
ns
ns
I
D
= 18 A; V
DD
= 160 V;
V
GS
= 10 V;
Figure 14
V
DD
= 100 V; R
D
= 5.6
;
V
GS
= 10 V; R
G
= 5.6
;
Resistive load
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 16 A; V
GS
= 0 V;
Figure 13
I
S
= 16 A;
dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
DS
= 25 V
0.9
1.2
V
t
rr
Q
r
130
0.8
ns
μ
C
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