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參數資料
| 型號： | PHX18NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數： | 6/15頁 |
| 文件大小： | 293K |
| 代理商： | PHX18NQ20T |
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 — 28 August 2000
6 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ac75
0
2
4
6
8
10
12
14
16
18
20
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VDS (V)
ID
(A)
8 V
4.5 V
5 V
5.5 V
6 V
Tj = 25 oC
VGS = 10V
03ac82
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
VGS (V)
ID
(A)
Tj = 25 oC
150 oC
VDS > ID X RDSon
03ac80
0
0.05
0.1
0.15
0.2
0.25
0.3
0
2
4
6
8
10
12
14
16
18
20
ID(A)
(
)
8 V
4.5 V
5 V
5.5 V
6 V
Tj = 25 oC
VGS = 10 V
03aa31
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
Tj (oC)
180
a
a
R
DSon 25 C
)
---------------------------
=
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